STi²GaN*: a new Smart Power initiative based on GaN technology
As the inventor of BCD Smart Power technology and a leading innovator in wide bandgap technologies like Silicon Carbide (SiC) and Gallium Nitride (GaN), ST is ideally positioned to take the next step in smart power integration. To contribute positively to a sustainable future, wide bandgap semiconductors solutions are fundamental for the development of highly efficient next-gen power systems. Such solutions can accelerate the adoption of electric vehicles and renewable energy generation systems.
GaN technology provides high-frequency operation, with increased efficiency and higher power density compared to silicon-based transistors. By combining the advantages of GaN technology with traditional semiconductor materials, a large variety of power applications will benefit in terms of size, performance and cost.
This includes applications such as wireless chargers, 48/12V bidirectional DC-DC converters, LiDAR, On-Board Chargers,
Class-D amplifiers, and power supplies.
Benefits of our STi²GaN technology
Standing for ST Intelligent and Integrated GaN, our STi²GaN technology leverages the benefits of gallium nitride (GaN) technology such as higher efficiency and higher frequency operation resulting in lower cooling requirements and smaller heat sinks in final applications.
Integration offers increased robustness and improved reliability with an extremely compact design at system level. ST's STi²GaN technology lets us provide two different levels of integration:
- A unique solution that enables the creation of monolithic GaN power stages with driver and protection
- A System-in-Package (SiP) that makes the solution even “smarter” by implementing an advanced ST proprietary BCD process to create sophisticated control circuits, all embedded in an optimized bond-wire-free package.
Innovative bond-wire-free package for even smarter System-in-Package solutions
Easily integrated into tomorrow's applications, STi²GaN helps to drastically increase operating frequencies (in the MHz range) for a compact, easier and cheaper design at system level. Furthermore, the innovative package is characterized by a drastic reduction of parasitic elements, which contributes to lower electromagnetic emissions (EMI), and improved thermal features thanks to the double-side cooling, further simplifying the choice of thermal dissipation strategy.
Work with ST and benefit from our unique position in GaN technology
ST is the ideal partner to work with to take full advantage of the benefits of Integrated Power GaN solutions both in 100 V and 650 V clusters.
Based on our extensive experience in Smart Power solutions and Automotive applications, ST ensures that engineers can meet stringent design requirements and benefit from the highest standards in terms of usability, performance and reliability, also offering the proven know-how to help your engineering teams to qualify their solutions.
* registered and/or unregistered trademarks of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere