Product overview
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.-
All features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge-less topologies
- High forward surge capability
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
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Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STPSC8TH13TI |
Active
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TO-220AB Ins | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Junction Temperature (°C) (max) | Country of Origin | Budgetary Price (US$)*/Qty | More info | ||
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STPSC8TH13TI | 3 distributors | Buy Direct |
Active
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EAR99 | NEC | Tube | TO-220AB Ins | - | - | 175 | CHINA | 2.421 / 100 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors