SCTL90N65G2V

Active

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
  • All features

    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Source sensing pin for increased efficiency

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STMicroelectronics - SCTL90N65G2V

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTL90N65G2V
Active
PowerFLAT 8x8 HV Industrial Ecopack2

SCTL90N65G2V

Package:

PowerFLAT 8x8 HV

Material Declaration**:

Marketing Status

Active

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
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Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
SCTL90N65G2V No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tape And Reel PowerFLAT 8x8 HV - - CHINA 19.0 / 1k

SCTL90N65G2V

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

19.0 / 1k

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

PowerFLAT 8x8 HV

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

19.0 / 1k

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors