Search
Cancel
Search History
Bookmark

Please log in  to show your saved searches.

SCTWA35N65G2V-4

Active
Save to myST

Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247-4 package

Download datasheet
Overview
Online design
Sample & Buy
Solutions
Documentation
CAD Resources
Tools & Software
Quality & Reliability
Get Started
Partner products
Sales Briefcase

Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Source sensing pin for increased efficiency
    • Very high operating junction temperature capability (TJ = 200 °C)
    Read more Read less

Recommended for you

All resources

Expand all categories
Resource title
Latest update

Product Specifications (1)

Resource title
Latest update
DS13583 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 1.0
03 Dec 2020
03 Dec 2020
DS13583 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 1.0

Application Notes (3)

Resource title
Latest update
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
03 Apr 2020
03 Apr 2020
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters 1.4
13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

Technical Notes & Articles (2)

Resource title
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
03 Apr 2020
03 Apr 2020
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing 1.0
22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

User Manuals (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

Flyers (5)

Resource title
Latest update
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
18 Mar 2021
18 Mar 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

Brochures (1)

Resource title
Latest update
Electric vehicle (EV) ecosystem 1.1
23 Mar 2020
23 Mar 2020
Electric vehicle (EV) ecosystem 1.1

Conference Papers (5 of 7)

Resource title
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics 1.0
23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
Load more

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTWA35N65G2V-4

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTWA35N65G2V-4
Active
HiP247-4 Industrial Ecopack2

SCTWA35N65G2V-4

Package:

HiP247-4

Material Declaration**:

More Info

Marketing Status

Active

Package

HiP247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
SCTWA35N65G2V-4 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tube HiP247-4 - - CHINA

SCTWA35N65G2V-4

Marketing Status

Active

ECCN (US)

EAR99
More Info

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

Packing Type

Tube

Package

HiP247-4

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

  • Newsletter Sign Up

Follow Us

All rights reserved © 2021 STMicroelectronics |
Terms of use | Sales Terms & Conditions | Trademarks | Privacy Portal | Manage Cookies

Did you know?

Please provide email

Please enter code

Congratulations!

Simple subscription

Congratulations!

x

You can start following this product to receive updates when new Resources, Tools and SW become available. It's easy and takes only 1 minute.

You can start following this product to receive updates when new Resources, Tools and SW become available. It's easy and takes only 1 minute.

You can start following this product to receive updates when new Resources, Tools and SW become available. It's easy and takes only 1 minute.

Invalid code, please check the code sent to your email address and validate again. In case you did not receive any code please select 'I did not receive code'

You can start following this product to receive updates when new Resources, Tools and SW become available. It's easy and takes only 1 minute.

ST (as data controller according to the Privacy Policy) will keep a record of my navigation history and use that information as well as the personal data that I have communicated to ST for marketing purposes relevant to my interests. My personal data will be provided to ST affiliates and distributors of ST in countries located in the European Union and outside of the European Union for the same marketing purposes 

---------
I understand that I can withdraw my consent at any time through opt-out links embedded in communication I receive or by managing my account settings. I can also exercise other user’s rights at any time as described in the Privacy Policy.

ST will retain your browsing history and use details of the products and services that you have previously accessed, purchased or downloaded to make suggestions to you for other products and services which ST believe you will also be interested in.
ST uses the personal data that you provide directly to it and through your activity on ST websites in accordance with the Privacy Policy, to send you (directly or via ST local affiliates or distributors) newsletters, advertisements or other specific and targeted marketing material about ST products and services. Your personal data will be provided to ST local affiliates and distributors in countries located in the European Union and outside of the European Union. You can consult the list of ST local affiliates and distributors in our website’s Privacy Policy. To send you specific and targeted marketing material, the information that you provide directly to ST and/or through your activity on ST websites may also be combined with other information that ST obtains from you in another context (e.g. if you enter into a business relationship with ST, its local affiliates or distributors).

You are now subscribed to
- SCTWA35N65G2V-4

You can re-use the validation code to subscribe to another product or application.

Sorry, there was a problem on our servers. Please try again.