Product overview
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.-
All features
- Very fast and robust intrinsic body diode
- Low capacitances
- Source sensing pin for increased efficiency
- Very high operating junction temperature capability (TJ = 200 °C)
Featured Videos
STPOWER SiC can be applied to all types of energy handling
All resources
| Resource title | Version | Latest update |
|---|
Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 03 Dec 2020 | 03 Dec 2020 |
Application Notes (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 15 Jul 2019 | 15 Jul 2019 | ||
| 1.4 | 13 Sep 2018 | 13 Sep 2018 |
Technical Notes & Articles (2)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 2.2 | 06 Jul 2021 | 06 Jul 2021 | ||
| 1.0 | 22 Sep 2020 | 22 Sep 2020 |
User Manuals (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.3 | 21 Oct 2016 | 21 Oct 2016 |
Flyers (5 of 6)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 28 Jul 2021 | 28 Jul 2021 | ||
| 1.0 | 08 May 2020 | 08 May 2020 | ||
| 1.0 | 01 Feb 2021 | 01 Feb 2021 | ||
| 1.0 | 14 Oct 2020 | 14 Oct 2020 | ||
| 1.0 | 15 May 2020 | 15 May 2020 | ||
| 3.0 | 25 May 2021 | 25 May 2021 |
Brochures (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 03 Jun 2021 | 03 Jun 2021 |
Conference Papers (5 of 8)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 29 Apr 2021 | 29 Apr 2021 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 25 Jul 2018 | 25 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Jul 2018 | 23 Jul 2018 | ||
| 1.0 | 23 Mar 2020 | 23 Mar 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTWA35N65G2V-4
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| SCTWA35N65G2V-4 | Active | HiP247-4 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| SCTWA35N65G2V-4 | 1 distributors | Active | EAR99 | NEC | Tube | HiP247-4 | - | - | CHINA | 10.3 / 100 | ||
Marketing Status
ActiveECCN (US)
EAR99Budgetary Price (US$)*/Qty
10.3 / 100(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
