Product overview
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.-
All features
- Very fast and robust intrinsic body diode
- Low capacitances
- Source sensing pin for increased efficiency
- Very high operating junction temperature capability (TJ = 200 °C)
Featured Videos
All resources
Resource title | Latest update |
---|
Product Specifications (1)
Resource title | Latest update | |||
---|---|---|---|---|
03 Dec 2020 | 03 Dec 2020 |
Application Notes (3)
Resource title | Latest update | |||
---|---|---|---|---|
03 Apr 2020 | 03 Apr 2020 | |||
15 Jul 2019 | 15 Jul 2019 | |||
13 Sep 2018 | 13 Sep 2018 |
Technical Notes & Articles (2)
Resource title | Latest update | |||
---|---|---|---|---|
03 Apr 2020 | 03 Apr 2020 | |||
22 Sep 2020 | 22 Sep 2020 |
User Manuals (1)
Resource title | Latest update | |||
---|---|---|---|---|
21 Oct 2016 | 21 Oct 2016 |
Flyers (5)
Resource title | Latest update | |||
---|---|---|---|---|
08 May 2020 | 08 May 2020 | |||
01 Feb 2021 | 01 Feb 2021 | |||
14 Oct 2020 | 14 Oct 2020 | |||
15 May 2020 | 15 May 2020 | |||
18 Mar 2021 | 18 Mar 2021 |
Brochures (1)
Resource title | Latest update | |||
---|---|---|---|---|
23 Mar 2020 | 23 Mar 2020 |
Conference Papers (5 of 7)
Resource title | Latest update | |||
---|---|---|---|---|
23 Jul 2018 | 23 Jul 2018 | |||
23 Mar 2020 | 23 Mar 2020 | |||
25 Jul 2018 | 25 Jul 2018 | |||
25 Jul 2018 | 25 Jul 2018 | |||
23 Jul 2018 | 23 Jul 2018 | |||
23 Jul 2018 | 23 Jul 2018 | |||
23 Mar 2020 | 23 Mar 2020 |
EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
SCTWA35N65G2V-4 | Active | HiP247-4 | Industrial | Ecopack2 | |
SCTWA35N65G2V-4
Package:
HiP247-4Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
min | max | |||||||||||
SCTWA35N65G2V-4 | No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tube | HiP247-4 | - | - | CHINA |
Marketing Status
ActiveECCN (US)
EAR99Budgetary Price (US$)*/Qty
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors