Product overview
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
All features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Featured Videos
All tools & software
All resources
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Product Specifications (1)
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| 25 Jul 2019 |
25 Jul 2019
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Application Notes (3)
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| 30 Jan 2019 |
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Flyers (4)
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA60H65DFB
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
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SPICE models (1)
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| ZIP | 25 Mar 2015 |
25 Mar 2015
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWA60H65DFB |
Active
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Trench gate field-stop IGBT, HB series 650 V, 60 A high speed | TO-247 long leads | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGWA60H65DFB | 2 distributors | Free Sample Buy Direct |
Active
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EAR99 | NEC | Tube | TO-247 long leads | -55 | 175 | CHINA | Trench gate field-stop IGBT, HB series 650 V, 60 A high speed | 4.2 / 1k | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
