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This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Conduction losses reduced
- Low profile, very low parasitic inductance, high current package
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Product Specifications (1)
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19 Sep 2016 |
19 Sep 2016
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Application Notes (5)
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User Manuals (1)
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21 Oct 2016 |
21 Oct 2016
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Flyers (1)
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
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HW Model, CAD Libraries & SVD (1)
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ZIP | 13 Jan 2021 |
13 Jan 2021
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Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STH300NH02L-6 |
Active
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H2PAK-6 | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STH300NH02L-6 | 1 distributors | Buy Direct |
Active
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EAR99 | NEC | Tape And Reel | H2PAK-6 | - | - | CHINA | 2.891 / 1k |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors