STH320N4F6-6

Active

N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-6 package

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Product overview

Description

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
  • All features

    • AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

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EDA Symbols, Footprints and 3D Models

STMicroelectronics - STH320N4F6-6

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH320N4F6-6
Active
H2PAK-6 Automotive Ecopack1

STH320N4F6-6

Package:

H2PAK-6

Material Declaration**:

PDF XML

Marketing Status

Active

Package

H2PAK-6

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
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Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
STH320N4F6-6 No availability of distributors reported, please contact our sales office Buy Direct
Active
EAR99 NEC Tape And Reel H2PAK-6 - - CHINA

STH320N4F6-6

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

H2PAK-6

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors