STPOWER SiC MOSFET’s brings now the advantages of the innovative wide bandgap materials (WBG) to your next design. ST SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future, with the most advanced technology platforms feature excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. Thanks to the excellent activities done by ST Silicon Carbide experts, systems equipped with ST SiC MOSFET’s can benefit of the excellent quality reached, almost comparable with the traditional silicon technologies. ST SiC MOSFET’s will allow you to design more efficient and compact systems than ever.
The main features and benefits of our STPOWER SiC MOSFETs include:
- Automotive Grade (AG) qualified devices
- Very high temperature handling capability (max. TJ = 200 °C)
- Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
- Low on-state resistance over the temperature range
- Simple to drive
- Very fast and robust intrinsic body diode proved
Our STPOWER SiC MOSFET product offer is completed with the state-of-the art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK and HU3PAK) specifically designed for automotive and industrial applications.
Featured Videos
Key benefits of the Silicon Carbide technology in car electrification application
-
SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
-
SCTWA50N120-4
Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package
-
SCT20N120H
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
-
SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 package
-
SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
-
SCTWA50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
-
SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
-
SCTL90N65G2V
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
-
SCTWA90N65G2V-4
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
-
SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
-
SCTW40N120G2VAG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
-
SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
-
SCT30N120H
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
-
SCTW35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
-
SCTW40N120G2V
Silicon carbide Power MOSFET 1200 V, 36 A, 70 mOhm (typ. TJ = 25 C) in an HiP247 package
-
SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
-
SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
-
SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
-
SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
-
SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
-
SCTWA90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
-
SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
-
SCTW90N65G2V
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
-
SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
-
SCTWA10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
-
SCT10N120H
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
-
SCTH70N120G2V-7
Silicon carbide Power MOSFET 1200 V, 90 A, 21 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
-
SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
-
SCT20N170
Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
-
SCT1000N170
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
-
SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
-
SCTH35N65G2V-7
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
-
SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
-
SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 package
-
SCTWA35N65G2V
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 long leads package
-
SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
-
SCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
-
SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
-
SCTL35N65G2V
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
-
SCTWA35N65G2V-4
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247-4 package
