STPOWER SiC MOSFET’s brings now the advantages of the innovative wide bandgap materials (WBG) to your next design. ST SiC MOSFETs, in mass production since 2014, offer an extended range of voltage, rating from 650 to 1700 V and higher in the near future, with the most advanced technology platforms feature excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. Thanks to the excellent activities done by ST Silicon Carbide experts, systems equipped with ST SiC MOSFET’s can benefit of the excellent quality reached, almost comparable with the traditional silicon technologies. ST SiC MOSFET’s will allow you to design more efficient and compact systems than ever.
The main features and benefits of our STPOWER SiC MOSFETs include:
- Automotive Grade (AG) qualified devices
- Very high temperature handling capability (max. TJ = 200 °C)
- Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
- Low on-state resistance over the temperature range
- Simple to drive
- Very fast and robust intrinsic body diode proved
Our STPOWER SiC MOSFET product offer is completed with the state-of-the art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK and HU3PAK) specifically designed for automotive and industrial applications.
Featured Videos
Key benefits of the Silicon Carbide technology in car electrification application
- SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT20N120H Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCTH40N120G2V-7 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH60N120G2-7 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
- SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCTWA90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
- SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
- SCTW60N120G2 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
- SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA60N120G2-4 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCTWA10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
- SCT10N120H Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT1000N170 Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT20N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package
- SCTWA50N120-4 Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package
- SCTW35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
- SCTWA20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
- SCTW70N120G2V Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTWA40N120G2V-4 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
- SCTL90N65G2V Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA70N120G2V-4 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTWA40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA90N65G2V-4 Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCT10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT30N120H Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
- SCTW40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCT20N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCTW90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH90N65G2V-7 Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
- SCTH70N120G2V-7 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
- SCT20N170 Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCTH35N65G2V-7 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
- SCTWA35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
- SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
- SCTL35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA35N65G2V-4 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
