2ST3360

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Hi-Rel NPN and PNP complementary transistors 60 V, 0.8 A

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Product overview

Description

2ST3360 is a dual complementary NPN and PNP bipolar transistor housed in Flat-8 hermetic package and specifically designed for aerospace applications. Developed from ST’s rad’hard high current density technology, it ensures high switching and best in class radiation hardness performances.
Suitable for power MOSFET driver applications, it is qualified in the ESCC system as per 5207/009 specification.
  • All features

    • 100 krad (Si) low dose rate
    • Temperature range: -65 °C to 200 °C
    • Linear gain characteristics
    • ESCC qualified: 5207/009 specification

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STMicroelectronics - 2ST3360

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
2ST3360
Proposal
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2ST3360

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Material Declaration**:

Marketing Status

Proposal

Package

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Grade

Industrial

RoHS Compliance Grade

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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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2ST3360 No availability of distributors reported, please contact our sales office
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2ST3360

Marketing Status

Proposal

ECCN (US)

-

ECCN (EU)

-

Packing Type

-

Package

-

Operating Temperature (°C)

(min)

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(max)

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SMD PIN/Detailed Spec

-

Quality Level

-

Lead Finish

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Package: Product Marking

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Country of Origin

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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors