製品概要
概要
The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.-
特徴
- Very low collector to emitter saturation voltage
- Fast-switching speed
- High current gain characteristic
- Through-hole IPAK (TO-251) power package in tube (suffix “-1”)
- Surface-mounting DPAK (TO-252) power package in tape& reel (suffix “T4)
注目ビデオ
All resources
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製品スペック (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 15 Jun 2018 |
15 Jun 2018
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD2805
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