製品概要
概要
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.-
特徴
- AEC-Q101 qualified
- Ultra low on-resistance
- 100% avalanche tested
注目ビデオ
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
All resources
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Product Specifications (1)
| Resource title | Latest update | |||
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| 14 Oct 2016 |
14 Oct 2016
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH185N10F3-2
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