STの28V～50V LDMOSトランジスタは、3.8GHzまでのアプリケーションを対象とします。従来のLDMOSと比べ、優れたRF性能（ゲイン：4dB向上 / 効率性：15%向上）、堅牢性（VSWR：>20:1）、および信頼性を特徴とします。セラミック･パッケージおよびコスト効率に優れたPowerSO-10RFプラスチック･パッケージで供給されており、リピータ、基地局、政府の広帯域通信などの用途に最適です。
主な特徴
- 動作周波数： 最大3.8GHz
- 出力： 数W～400W
- 効率性： >60%
- 高い精度とリニアリティ
- 堅牢性： >20:1 VSWR（全位相、CW）
- ダイ供給可能
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ST50V10100
RF Power LDMOS transistor for frequencies up to 1.5 GHz
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LET9120
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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ST9060C
RF Power LDMOS transistor HF up to 1.5 GHz
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PD57060S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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ST9045C
RF Power LDMOS transistor HF up to 1.5 GHz
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LET9045C
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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SD57030
RF power transistor, the LdmoST family
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ST16045
45 W, 28 V RF Power LDMOS transistor from 0.7 to 1.7 GHz
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PD57018-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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SD57030-01
RF power transistor, the LdmoST family
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ST05250
250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
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ST36015
20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor
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LET9045F
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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ST50V10200
RF Power LDMOS transistor HF to 1.5GHz
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SD57060
RF power transistor, the LdmoST plastic family
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SD56060
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
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SD57045-01
RF power transistor, the LdmoST family
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SD57045
RF power transistor, the LdmoST family
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RF3L05150CB4
150 W, 28/32 V RF power LDMOS transistor from HF to 1 GHz
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ST16010
10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz
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STAC9200
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
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PD57030-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD57045-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
