STの7V～13.6V LDMOSトランジスタは、STの最先端のLDMOS技術をSOT-89、PowerFLAT™、PowerSO-10RFなどの表面実装型パッケージの利点と組み合わせて、民生用および公共安全無線、船舶用携帯無線、EPIRB、ソナー･ブイ、UHF RFID、自動メータ･リーダ、VHF / UHFアラーム･システム、ワイヤレス･データ･モデムなど、2GHzまでのアプリケーションに対してコスト効率に優れたソリューションを提供します。
主な特徴
- 動作周波数： 最大2GHz
- 出力： 1W～35W
- 効率性： >60%
- 高い精度とリニアリティ
- 広帯域性能
- ダイ供給可能
- PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84006L-E RF Power LDMOS transistor
- PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD55008-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84008L-E RF Power LDMOS transistor
- PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD55025-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84001 RF power transistor the LdmoST plastic family
- PD85004 RF power transistor the LdmoST plastic family
- PD84002 RF power transistor, the LdmoST plastic family
- PD85006L-E RF power transistor, the LdmoST plastic family
- PD54008L-E RF power transistors, the LdmoST plastic family
