产品概述
描述
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.-
所有功能
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
精选 视频
All tools & software
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产品规格 (1)
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28 Jul 2020 | 28 Jul 2020 |
应用手册 (4)
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13 Sep 2018 | 13 Sep 2018 | |||
13 Sep 2018 | 13 Sep 2018 | |||
13 Sep 2018 | 13 Sep 2018 | |||
13 Sep 2018 | 13 Sep 2018 |
技术文档 (1)
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13 Nov 2016 | 13 Nov 2016 |
用户手册 (1)
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21 Oct 2016 | 21 Oct 2016 |
宣传册 (5)
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24 Nov 2020 | 24 Nov 2020 | |||
22 Feb 2021 | 22 Feb 2021 | |||
08 Jan 2021 | 08 Jan 2021 | |||
06 Oct 2020 | 06 Oct 2020 | |||
08 May 2020 | 08 May 2020 |
手册 (1)
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23 Mar 2020 | 23 Mar 2020 |
EDA Symbols, Footprints and 3D Models
All resources
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SPICE models (2)
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ZIP | 28 Jul 2020 | 28 Jul 2020 | ||
ZIP | 03 Aug 2020 | 03 Aug 2020 |
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STH10N80K5-2AG | 2 distributors | 批量生产 | EAR99 | NEC | Tape And Reel | H2PAK-2 | - | - | CHINA |
供货状态
批量生产ECCN (US)
EAR99Budgetary Price (US$)*/Qty