产品概述
描述
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.-
所有功能
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
精选 视频
All tools & software
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产品规格 (1)
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10 Sep 2020 |
10 Sep 2020
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应用手册 (4)
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技术文档 (1)
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用户手册 (1)
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21 Oct 2016
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宣传册 (5)
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08 May 2020 |
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手册 (1)
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23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
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SPICE models (1)
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ZIP | 17 Nov 2014 |
17 Nov 2014
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STU7N80K5 | 1 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tube | IPAK | - | - | CHINA |