我们的7-13.6V LDMOS晶体管结合了意法半导体先进的LDMOS技术以及SOT-89、PowerFLAT™和PowerSO-10RF等表面贴封装的优势，能够为最高2 GHz的应用提供高性价比解决方案，如商业和公共安全便携式无线电台、航海用便携式无线电台、EPIRB、声纳浮标、UHF RFID、自动抄表器、VHF/UHF报警系统和无线数据调制解调器。
主要特性
- 工作频率高达2 kHz
- 输出功率：1W至35W
- 效率 >60%
- 高增益和线性
- 宽带性能
- 以晶片形式提供
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PD55003L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD54003-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD84006L-E
RF Power LDMOS transistor
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PD85006-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD55008-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD84008L-E
RF Power LDMOS transistor
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PD85035-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD54008-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD85025-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD55003-E
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
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PD85015-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD55015-E
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
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PD55025-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD84001
RF power transistor the LdmoST plastic family
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PD85004
RF power transistor the LdmoST plastic family
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PD84002
RF power transistor, the LdmoST plastic family
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PD85006L-E
RF power transistor, the LdmoST plastic family
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PD54008L-E
RF power transistors, the LdmoST plastic family
