我们的7~50 V LDMOS晶体管结合了意法半导体的最先进LDMOS技术和表面贴装式封装（比如SOT-89、PowerFLAT™和PowerSO-10RF）的优点，提供的经济划算解决方案适用于频率不超过4 GHz的应用，如：
- 商业和公共安全无线电和基站。
- 航海用无线电
- 军用宽带通信
- EPIRB和声纳浮标
- UHF RFID和自动抄表系统（AMRs）
- 无线数据调制解调器
- ST50V10100 RF Power LDMOS transistor for frequencies up to 1.5 GHz
- LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
- ST9060C RF Power LDMOS transistor HF up to 1.5 GHz
- PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- RF2L42008CG2 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
- ST9045C RF Power LDMOS transistor HF up to 1.5 GHz
- LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
- SD57030 RF power transistor, the LdmoST family
- RF3L05250CB4 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- RF3L05400CB4 400 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- ST16045 45 W, 28 V, 0.7 to 1.7 GHz RF Power LDMOS transistor
- PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- RF2L27015CG2 15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
- SD57030-01 RF power transistor, the LdmoST family
- RF2L27025CG2 25 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
- ST05250 250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
- ST36015 20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor
- LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
- ST50V10200 200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor
- SD56060 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
- SD57045-01 RF power transistor, the LdmoST family
- SD57045 RF power transistor, the LdmoST family
- RF3L05150CB4 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
- ST16010 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor
- RF3L05200CB4 200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
- PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD57045-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- RF2L15200CB4 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor
- PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84006L-E RF Power LDMOS transistor
- PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD55008-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84008L-E RF Power LDMOS transistor
- PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD55025-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84001 RF power transistor the LdmoST plastic family
- PD85004 RF power transistor the LdmoST plastic family
- PD84002 RF power transistor, the LdmoST plastic family
- PD85006L-E RF power transistor, the LdmoST plastic family
- PD54008L-E RF power transistors, the LdmoST plastic family
