Combining a short conduction-channel length with a high breakdown voltage, this LDMOS family is well suited for RF power amplifiers for TELECOM & SATCOM Communications. With IDCH technology we expand the range of applications that ST can address offering to the Power RF designers competitive in cost solutions joined with superior performances (higher efficiency, low thermal resistance, optimized power RF package and very high frequency operation). The benefits will be in terms of power consumption savings, first in class reliability, cost effective solutions.
KEY APPLICATIONS
- 1.6 GHz satellite communications
- 1.4 - 1.5 GHz band for IMT
- 0.7 – 3.8 GHz Telecom
- RF2L36075CF2 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
- RF2L16180CB4 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
- RF2L27015CG2 15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
- RF2L27025CG2 25 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
- PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs
- PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- RF2L36040CF2 40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor
- ST36015 20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor
- RF2L16180CF2 180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
- RF2L42008CG2 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
- ST16010 10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz
- RF2L16080CF2 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
